Rahul Rai
PhD Researcher
Hsinchu
Summary
Experienced semiconductor engineer with strong expertise in gallium nitride (GaN) power devices, specializing in the processing and fabrication of high-electron-mobility transistors (HEMTs). Skilled in developing and optimizing cleanroom process flows, including lithography, etching, metallization, passivation, and gate stack engineering. Proficient in advanced electrical characterization techniques such as I–V, C–V, pulsed I–V, and breakdown analysis to evaluate device performance. Experienced in reliability testing and failure analysis, with a focus on threshold voltage stability, off-state leakage, trapping effects, and long-term degradation mechanisms. Demonstrated ability to link fabrication processes with electrical performance through systematic data-driven analysis. Hands-on experience with wide-bandgap semiconductors, addressing challenges in epitaxial design, thermal management, and normally-off operation. Adept at problem-solving, process optimization, and implementing solutions to improve device yield and reliability. Highly motivated to apply technical expertise to industry-focused development and advanced R&D projects.
Overview
2026
2026
years of professional experience
3
3
Certifications
1
1
Language
Work History
Research Engineer (IITK)
National Centre for Flexible Electronics
- Characterization, Modeling, and Design of amorphous InGaZnO-based thin-film transistor (TFT) circuits for sensing temperature and pH variation in physiological applications
- Responsible for characterization and compact modeling of a-InGaZnO-based TFTs
- Involved in the design of TFT circuits for physiological sensor applications
- A Low-Power High-Speed Comparator For Precise Applications(circuit design, layout,LVS using tsmc180nm )
UG Project
- Infrared Sensing Radar System.
PhD Thesis
NYCU Taiwan
- Current
- GaN FinHEMT for Power Device Application
- Gained expertise in fabrication and characterization of Compound semiconductor devices
- Fabricating E-mode GaN FinHEMT with Ferroelectric Gate stack for power device Application.
- Supervisor – Dr. Edward Chang
MT Thesis
- 12.2017
- Modelling and Analysis of SOI MOSFET for the reduction of kink effect and self-heating.
- SOI devices' limitations like “kink effect” in the output current-voltage characteristics, and self-heating effect, are considered in this work.
- Simulation of the SELBOX structure and step buried oxide layer has been performed through TCAD simulations
- It is found that the kink in the output characteristics for a 0.4 μm thick partially depleted SOI MOSFET can be virtually abolished with a very narrow gap in the back oxide layer
- Supervisor–Dr. R. Nakkeeran
Education
Ph.D. (Pursuing) (Dual Ph.D.) - Microelectronic and VLSI (Electrical Engineering)
Indian Institute of Technology Kanpur and NYCU Taiwan
M. Tech - Electronics Engineering
Pondicherry (Central) University
01.2017
B. Tech - Electronics and Communication Engineering
Uttar Pradesh Technical University
01.2013
Skills
Experienced researcher having expertise in semiconductor devices with emphasis on
References
Baquer, Mazhari, Professor, baquer@iitk.ac.in, +91-512-2597924, I.I.T. Kanpur, India, Electrical Engineering
Accomplishments
- Research Fellowship
- Ministry of Human Resource and Development, India
- NYCU Elite Research Fellowship, Taiwan
- Mediatek Research Fellowship, Taiwan
- NSTC Semiconductor Research Fellowship, Taiwan
Extra-Curricular Activities
- Instrumental in setting up the Device Simulation Laboratory in NCFlexE at I.I.T. Kanpur Actively campaigned for the Voluntary Blood Donation Program 18-‘19
- Taught Mathematics and actively participated in creating awareness programs for the Importance of Hygiene and Cleanliness to the school kids of rural areas in Lucknow (India) under the National Service Scheme
Relevant Coursework
- Solid State Devices: IC Fabrication Technology, Organic Electronics
- Semiconductor Device Modeling: Analog/Digital VLSI Display Materials and Technologies
- Mathematical Methods in Physical Sciences: Circuits, VLSI System Design Compound Semiconductor Device Processing.
Teaching Experience
- Graduate Level Courses
- Semiconductor Device Modeling
- Analog/ Digital VLSI Circuits
- Organic Electronics
- Undergraduate Level Courses
- Introduction to Electronics (Theory and Laboratory)
- Electronic Circuits Laboratory
- English Communication Skills
- Responsible for solving and grading assignments/ projects and exams
Certification
Semiconductor mandarin certification
Collecting fine perfumes, Sports, Finance
Exploring and collecting unique scents as a creative and sensory-driven personal hobby.
Timeline
Semiconductor mandarin certification
09-2024
Advance Processing Equipment, TSRI
02-2020
Processing for VLSI Technology, TSRI
01-2020
UG Project
PhD Thesis
NYCU Taiwan
- Current
MT Thesis
- 12.2017
M. Tech - Electronics Engineering
Pondicherry (Central) University
B. Tech - Electronics and Communication Engineering
Uttar Pradesh Technical University
Research Engineer (IITK)
National Centre for Flexible Electronics
Ph.D. (Pursuing) (Dual Ph.D.) - Microelectronic and VLSI (Electrical Engineering)
Indian Institute of Technology Kanpur and NYCU Taiwan
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