Experienced semiconductor engineer with strong expertise in gallium nitride (GaN) power devices, specializing in the processing and fabrication of high-electron-mobility transistors (HEMTs). Skilled in developing and optimizing cleanroom process flows, including lithography, etching, metallization, passivation, and gate stack engineering. Proficient in advanced electrical characterization techniques such as I–V, C–V, pulsed I–V, and breakdown analysis to evaluate device performance. Experienced in reliability testing and failure analysis, with a focus on threshold voltage stability, off-state leakage, trapping effects, and long-term degradation mechanisms. Demonstrated ability to link fabrication processes with electrical performance through systematic data-driven analysis. Hands-on experience with wide-bandgap semiconductors, addressing challenges in epitaxial design, thermal management, and normally-off operation. Adept at problem-solving, process optimization, and implementing solutions to improve device yield and reliability. Highly motivated to apply technical expertise to industry-focused development and advanced R&D projects.
Experienced researcher having expertise in semiconductor devices with emphasis on
Semiconductor mandarin certification
Exploring and collecting unique scents as a creative and sensory-driven personal hobby.
Semiconductor mandarin certification
Advance Processing Equipment, TSRI
Processing for VLSI Technology, TSRI