Jhih Han Du

Company Overview: The company collaborated with strategic customers to customize 1550 nm for LiDAR application

• Collaborated with a leading automotive LiDAR client to release 1550nm InP technology within two years
• Worked with the laser diode team to release 1270-1390 nm DFB (CWDM) lasers, building WIN Semiconductors' optical communication technology within 2.5 years
• Improved LED light emission yield by 50% within six months, while increasing wafer production volume by 8 times
• The company collaborated with strategic customers to customize 1550 nm for LiDAR application

Company Overview: The company customized a 0.45μm GaN-on-SiC process in 2016-2019 for base station, achieving mass production in 2019

• Co-developed 0.45µm GaN HEMT technology with IDM, increasing wafer production volume by six times within 2.5 years
• Shortened HTRB (High Temperature Reverse Bias) cycle time from 1 months to 3 days by implementing on-wafer quick testing
• Resolved HTRB (High Temperature Reverse Bias) test issues, reduced leakage current by 1000 times, and kept pinch-off variation within 5%
• Fixed HTOL (High Temperature Operating Life) test issues, reduced leakage current by 100 times, and maintained pinch-off voltage variation within 5%
• The company customized a 0.45μm GaN-on-SiC process in 2016-2019 for base station, achieving mass production in 2019

Company Overview: The company developed 4-inch 0.25μm GaN-on-SiC technology for radar and released it in 2012

• Developed unit processes and integrated front- and back-side modules to produce GaN prototype products within one year
• Released a 0.25µm GaN HEMT technology within two years, meeting industry leaders' performance standards
• Collaborated with the GaN team to develop 0.45µm GaN-on-SiC HEMT technology, creating WIN Semiconductors' own technology within two years
• Trained all new employees to help them become familiar with the GaN process
• The company developed 4-inch 0.25μm GaN-on-SiC technology for radar and released it in 2012
• Monitored employee performance to keep projects on task.

Company Overview: The company's revenue CAGR was 41% from 2005 to 2011, exceeding the GaAs industry average of 12%, with a 50% market share and a goal to maintain an 85% yield against the IDM standard of 90%

• Achieved a 60% yield improvement in ED mode pHEMT within nine months while increasing wafer production volume by 4 times
• Took on integration tasks and gained experience in problem-solving and process improvement as a newcomer
• The company's revenue CAGR was 41% from 2005 to 2011, exceeding the GaAs industry average of 12%, with a 50% market share and a goal to maintain an 85% yield against the IDM standard of 90%
• Ensured seamless user experience by conducting thorough testing of integrated systems before deployment.